arXiv (All)
open access
Revealing Detailed Transport Mechanisms in Silicon Tunneling Diodes
Understanding carrier transport in heavily doped semiconductor junctions is essential for developing next-generation tunneling devices for cryogenic electronics and steep-slope technologies. In this work, we investigate the transport mechanisms in a silicon tunneling diode using extensive TCAD (Tech
Conceptio Open Archive
Analyze & explore related research in Conceptio
Connect this record directly into your research workflow or AI agent. Explore citations across open repositories, query full text, and export structured proof bundles.
This document is indexed with metadata only: full text is not available in the archive for this record. Open the official source ↗
Related documents
- Low breakdown field and high ionization index in ReSe2 avalanche field-effect transistors#202848
- Electric field dependency of traps in mesfet/hemt devices#638672
- A Framework to Pinpoint Bottlenecks in Emerging Solar Cells and Disordered Devices via Differential Machine Learning#629796
- A Framework to Pinpoint Bottlenecks in Emerging Solar Cells and Disordered Devices via Differential Machine Learning#627934
- Giant Thermal Amplification via Engineered Dissipation in a Sierpinski-Gasket Aharonov-Bohm Interferometer#630184
Record · ID 1388654
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Bring this data into your agent: Connect via MCP or API · 20 free credits to start · no card required
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive