arXiv (All)
open access
Design-Oriented Modeling of TSV Substrate Noise Coupling to Ring VCOs
Through-silicon vias (TSVs) enable dense vertical interconnects in 3D-IC and chiplet systems, but their metal-oxide-silicon structure introduces significant parasitic coupling paths that can degrade the spectral purity of sensitive RF blocks. This paper presents a compact, design-oriented methodolog
Conceptio Open Archive
Analyze & explore related research in Conceptio
Connect this record directly into your research workflow or AI agent. Explore citations across open repositories, query full text, and export structured proof bundles.
This document is indexed with metadata only: full text is not available in the archive for this record. Open the official source ↗
Related documents
- Towards exascale fully relativistic pseudopotential density functional theory calculations enabled by mixed-precision computation and compressed-communication using residual based subspace iteration#999245
- Allocation of a Generic Associated Channel Type for ITU-T MPLS Transport Profile Operation, Maintenance, and Administration (MPLS-TP OAM)#420668
- Sub-100 nm Gate Technologies for Si/SiGe-Buried-Channel RF Devices#1266599
- Research data supporting: "Direct imaging of carriers funnelling in a dielectric engineered 2D semiconductor."#249487
- Data for "Structural Investigations of Modified Porous Silica Carrier Materials for Heterogeneous Catalysis"#227145
Record · ID 1389304
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Bring this data into your agent: Connect via MCP or API · 20 free credits to start · no card required
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive