HAL (France)
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Strain and Interface-Driven Localized Emission in MoSe 2 Monolayers on GaN Nanopillars
Solid-state quantum emitters (QEs) in two-dimensional semiconductors offer compact, chip-compatible sources for quantum photonics. In transition-metal dichalcogenides (TMDs), nanopillars are widely used to induce localized emission, yet the underlying confinement mechanism and the relative roles of
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