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Nanowire-Assisted Epitaxial Lateral Overgrowth of Planar GaN(0001) on Diamond(100)
GaN-on-diamond heterostructures are promising for high-power and high-frequency electronics, however, direct epi- taxial growth on diamond (100) remains challenging due to severe lattice and thermal mismatches, which induce high threading dislocation densities. To overcome this challenge, we have us
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