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Mismatch between Raman shear modes and ferroelectric polarization in 3R-MoS$_{2}$
Sliding ferroelectricity in parallel-stacked two-dimensional van der Waals materials enables a broad range of novel device concepts, but exploiting it requires reliable, non-destructive assignment of the underlying stacking order and polarization state. Here, we combine Kelvin-probe force microscopy
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