Curvature of free-standing polycrystalline SiC thick films grown by CVD: On the origin of the residual stress gradient

Polycrystalline SiC can serve as a receiver substrate for the fabrication of engineered SiC wafers for powerelectronics devices. These substrates must be as flat as possible for further processing. They can be fabricated by chemical vapor deposition (CVD) on a sacrificial substrate, which is then re