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A Self-Consistent Two-Carrier Drift-Diffusion Framework for p-n Junctions: Extended Diode Equation, Power Dissipation, and Base Transit Time

Yang, Jianhong et al.
arXiv (All) · Papers
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applied-physicsmesoscale-and-nanoscale-physics
The classical theory of p-n junctions derives the current-voltage characteristic from minority-carrier diffusion alone: majority carriers are treated as an inert background, the quasi-neutral base as field-free, and the junction voltage as equal to the applied bias. These premises fail together unde
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