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High-quality, deep formation and identification of oxygen-vacancy defects in silicon carbide

Shiotani, Ryo et al.
arXiv (All) · Papers
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materials-sciencequantum-physics
Optically addressable paramagnetic defects in silicon carbide (SiC) are attractive for scalable quantum technologies such as quantum sensing. PL5, PL6, and PL7 are promising defects for their high brightness and spin-readout contrast. Although generation by oxygen implantation has been reported very
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