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Growth and morphology of core-shell nanowires incorporating dissimilar hexagonal semiconductors: the case of InAs-ZnTe
Core-shell nanowires incorporating semiconductors from two groups, III-V for the core and II-VI for the shell, have been grown by molecular beam epitaxy in two dedicated chambers connected under ultra-high vacuum, and studied by electron microscopy. During the growth of the shell, the wurtzite struc
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