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Photoactive and Ultrastable Silicon/Boron Doped Diamond Photoanodes Enable Longstanding Photoinduced Electrochemiluminescence

Changlin Zhou et al.
HAL (France) · Papers
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semiconductor
The lifetime of narrow bandgap photoanodes, employed in harsh photoelectrochemical energy conversion processes, relies on the protection layers that shield the semiconductor from severe oxidative degradation and passivation caused by the electrolyte. Here, we report ultrastable n -Si-based p
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