Complete Au-free Metallization Platform for UWBG Al$_{0.65}$Ga$_{0.35}$N channel MOS-HEMTs using Ti/Al/Ti Ohmic Contacts and Refractory TiN/Pt Gates

Au-free ohmic contacts and refractory gate stacks are critical for integrating ultra-wide-bandgap (UWBG) Al-rich AlGaN transistors with Si-CMOS technology. In this work, we demonstrate, to our knowledge, the first complete Au-free metallization platform for Al$_{0.65}$Ga$_{0.35}$N-channel MOS-HEMTs,