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10 kV $β$-Ga$_2$O$_3$ Sub-Bandgap Triggered Impurity Photoconductive Semiconductor Switches (i-PCSSs): Lessons for Optimal Design
$β$-Ga$_2$O$_3$ photoconductive semiconductor switches (PCSSs) are attractive for high-voltage operation, but above-bandgap triggering requires deep-ultraviolet excitation. Here, we investigate a 650-um-thick, 0.01% Fe-doped $β$-Ga$_2$O$_3$ impurity PCSS with a 5-mm lateral gap under continuous-wave
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