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Universal model of the growth of III-V tetrahedral semiconductors on polar surfaces: pyramids and glue atoms. I. Clean surface properties
Ab initio calculations were used to elucidate the properties of the polar surfaces of III-V tetrahedral semiconductors, i.e., metal- and nonmetal-terminated. The systems considered were clean wurtzite gallium nitride (i.e. (0001) and (000-1) GaN surfaces), zinc blende gallium phosphide (i.e. (111) a
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