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Optical phase transition characteristics in germanium-antimony-selenium-tellurium and graphene oxide thin film for application in photonics memory.
This thesis aims to study the phase change characteristic of Ge2Sb2Se4Te1 (GSST) using 1550 nm pulsed laser as excitation source, and to explore its potential in multilevel nonvolatile photonic memory application. Firstly, the amorphous to crystalline state phase transition of GSST using 1550 nm pul
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