Conceptio › Archive › HAL (France)
HAL (France)open access

Minority carrier lifetime and operating voltage dependence on the barrier layer thickness in nBn infrared photodetectors

M. Tornay et al.
HAL (France) · Papers · License: Open Access
Open Source ↗
0, InAs/inAsSb, Operating voltage, Minority carrier lifetime, Barrier layer thickness, XBn infrared photodetector
This document is indexed with metadata only — full text is not available in the archive for this record. Open the official source ↗
Record · ID 231665
Retrieved via Conceptio — every document is proof-bundled with source, license, and retrieval metadata.