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Electro-Optical Voltage Probe on the Pockels Effect: Experimental Validation Up to 4-kV

Tarek Ben Salah et al.
HAL (France) · Papers · License: Open Access
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Avalanche testing, SiC MOSFET, High-voltage measurement, 0, Galvanic isolation, EMI rejection, 1, Pockels effect
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Record · ID 308287
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