Iris Unina Prodmetadata only
Threshold Voltage Temperature Dependence for a 1.2 kV SiC MOSFET with Non-Linear Gate Stack
silicon carbide, power mosfet, tcad simulations, ferroelectric materials, short-circuit test.
This document is indexed with metadata only — full text is not available in the archive for this record.
Open the official source ↗
Record · ID 342255
Conceptio Open Knowledge Archive — every document is proof-bundled with source, license, and retrieval metadata.