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Back-End-of-Line-Compatible Passivation of Sulfur Vacancies in MoS2 Transistors Using Electron-Withdrawing Benzenethiol

Jung, Haksoon et al.
Kaist Koasas · Other
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van der waals (vdw), molybdenum disulfide, field-effect transistors (fets), interfaces, traps, passivation, self-assembled monolayers (sams), layer mos2
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Record · ID 342294
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