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Leakage-Induced Space-Charge Accumulation and Interfacial Field Redistribution in a Dielectric Nanocapacitor Revealed by Operando Electron Holography

Bérangère Disic et al.
HAL (France) · Papers · License: Open Access
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Operando electron holography, Silicon nitride, 2, Charge trapping, 0, Nanocapacitor, 1, Transport mechanism
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Record · ID 408682
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