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EDS data for HVPE AlxGa1-xN grown on GaN substrates of different misorientation

Sochacki, Tomasz et al.
Repod Dataverse Oai Archive · Other
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crystalgrowthengineeringphysics
engineering, physics, aluminum-gallium nitride (algan), halide vapor phase epitaxy (hvpe), crystal growth, growth morphology, gallium nitride (gan), seed misorientation
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