Rodaremetadata only
High-efficiency phosphorus activation in Ge0.95Sn0.05 enabled by ion implantation and flash lamp annealing with preserved alloy integrity
gesn alloys, ion implantation, flash lamp annealing, dopant activation, non-equilibrium doping, strain engineering
This document is indexed with metadata only — full text is not available in the archive for this record.
Open the official source ↗
Record · ID 469947
Conceptio Open Knowledge Archive — every document is proof-bundled with source, license, and retrieval metadata.