Recherche Data Gouv Dataverse OAI Archive
metadata only
CC0 1.0
Measurement of the transport properties of InGaN/GaN heterostructure analyzed using a two-layer model
Conceptio Open Archive
Analyze & explore related research in Conceptio
Connect this record directly into your research workflow or AI agent. Explore citations across open repositories, query full text, and export structured proof bundles.
This document is indexed with metadata only: full text is not available in the archive for this record. Open the official source ↗
Related documents
- Ultra-High-Pressure Annealing Data for Mg-ion-implanted GaN with carbon capping#221931
- Metastable defects in III-Nitrides#820840
- Gallium Arsenide (GaAs): Properties, Applications, and Recent Research Advances#402296
- Anomalous Behavior of the Ni$^{1+}$ moment in bi-infinite-layered La$_3$Ni$_2$O$_5$F#1048720
- Condensed-Matter-Inspired Numerical Simulation of Transport on a Schwarzschild Black Hole Horizon#326534
Record · ID 499418
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Bring this data into your agent: Connect via MCP or API · 20 free credits to start · no card required
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive