HAL (France)open access
Weak Distance Dependence of Hot-Electron-Transfer Rates at the Interface between Monolayer MoS<sub>2</sub> and Gold
Ultrafast spectroscopy, Time-resolved photoemission electron microscopy, 0, TMD/metal interface, Transition-metal dichalcogenides TMD/metal interface hot carriers time-resolved photoemission electron microscopy ultrafast spectroscopy, Transition-metal dichalcogenides, Hot carriers, 1
This document is indexed with metadata only — full text is not available in the archive for this record.
Open the official source ↗
Record · ID 630325
Retrieved via
Conceptio — every document is proof-bundled with source, license, and retrieval metadata.