Conceptio › Archive › HAL (France)
HAL (France)open access

Temperature and Bias Dependence of the DC and RF Characteristics of a 150 nm AlGaN/GaN-on-SiC HEMT for Microwave Applications

Mohammad Abdul Alim et al.
HAL (France) · Papers · License: Open Access
Open Source ↗
DC parameters, Thermal variation, 150 nm GaN HEMT, Multi-bias, 0
This document is indexed with metadata only — full text is not available in the archive for this record. Open the official source ↗
Record · ID 662001
Retrieved via Conceptio — every document is proof-bundled with source, license, and retrieval metadata.