Review of: "High speed (doping) nMOS graphene transistor in p- and n-doping electronic circuits (positive and negative)"

In a nMOS graphene field effect transistor, the resistance between two electrodes can be transferred or controlled by a third electrode. In a multilayer graphene field effect nMOS transistor, the current between the two electrodes is controlled by the electric field from the third electrode. Unlike the bipolar transistor, it is capacitively connected to the third electrode and is not in contact with the semiconductor. Three electrodes in the structure of the nMOS graphene field effect transistor are connected to the source, drain and gate, and this action increases the switching speed (doping) in the nMOS graphene transistor circuit.