HAL (France)
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Momentum-Resolved Tunneling Modulation Induced Giant Multistate Resistance in Antiferroelectric Multiferroic Junction
Multiferroic tunnel junctions (MFTJs), integrating ferroelectric and ferromagnetic functionalities within a single nanoscale device, hold significant promise for nonvolatile, multistate memory and innovative computing paradigms. In conventional MFTJs, tunneling resistance modulation relies primarily
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