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Decoupling the dark count rate contributions in Ge-on-Si single photon avalanche diodes
Single Photon Avalanche Diodes (SPADs) are semiconductor devices capable of accurately timing the arrival of single photons of light. Previously, we have demonstrated a pseudo-planar Ge-on-Si SPAD that operates in the short-wave infrared, which can be compatible with Si foundry processing. Here, we
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