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Shallow Trap States Control Electrical Performance of Amorphous Oxide Semiconductor Thin-Film Transistors
The performance of n-type amorphous oxide semiconductor thin-film transistors (TFTs) is largely controlled by the density of states (DoS) near the conduction band mobility edge. Here, the full subgap DoS of amorphous InGaZnO (a-IGZO) TFTs, used in display panels and dynamic random-access memory (DRA
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