HAL (France)
open access
Effect of metal/semiconductor interface on the resistance of a nonalloyed p-GaN/Ni–Au contact
The formation of an ohmic p-contact represents a critical step in the processing of GaN-based devices such as light-emitting diodes (LEDs). Thermal annealing in an O2-containing atmosphere at high temperature of a GaN/Ni–Au contact is mostly used today, while nonannealed contacts have been reported
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