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4 MV/cm (010) $β$-Ga$_2$O$_3$ Heterojunction Diodes Realized by Low-Damage e-Beam NiO$_x$ Interlayers
We report on the utilization of a low-damage e-beam NiO$_x$ deposition process to realize field-plated heterojunction diodes (FP-HJDs) on (010) $β$-Ga$_2$O$_3$ films with high critical breakdown field strengths beyond 4 MV/cm and power figure of merits (PFOM) of >1 GW/cm$^2$. Diodes were fabricated
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