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Design and development of poly -(3 -hexylthiophene) field effect transistors
Organic field effect transistors (OFETs) with poly(3-hexylthiophene) (P3HT) as the active layer are developed and studied. The device characteristics are significantly affected by source/drain contact resistance, and P3HT-SiO 2 interface and the traps. These results are verified by the numerical dev
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