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$β-(Al_{0.19} Ga_{0.81})_2 O_3/Ga_2 O_3$ Modulation-Doped Field-Effect Transistors with $>$ 6 kV Breakdown

Saga, Julian Gervassi et al.
arXiv (All) · Papers · License: Open Access
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applied-physicsmaterials-science
materials science, applied physics
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Record · ID 973993
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