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Groove-shaped defects in as-grown (001)-oriented $β$-Ga$_2$O$_3$ epilayers prepared by halide vapor phase epitaxy
Groove-shaped defects (GSDs) degrade the surface flatness of as-grown (001)-oriented $β$-Ga$_2$O$_3$ epilayers and necessitate chemical mechanical polishing before device fabrication, increasing processing costs and the risk of damage. We investigated the morphology, subsurface structure, and format
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