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Wafer-Level 1/f Noise Characterization of Scaled P-Type Nanosheets and Comparison with Planar HKMG Transistors
We present a comprehensive wafer-level 1/f noise study of scaled Gate-All-Around (GAA) p-type nanosheet transistors and benchmark them against large-area planar High- \k{appa} Metal Gate (HKMG) devices to assess the impact of device architecture on reliability. By statistically analyzing noise data
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