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Heteroepitaxial Growth of PbSe on InP Substrates via Lattice-Matched III-V Buffer Layers
Detector cost remains a barrier to the widespread adoption of mid-wave infrared (3-5 micron) technology. PbSe, an inexpensive narrow band gap IV-VI semiconductor that has been used since the early 1940s, delivers high performance for infrared detection despite the abundance of grain boundaries in po
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