arXiv (All)
open access
Thermal Stability and Carrier Recombination Kinetics in InGaN/GaN Multiple Quantum Wells under High-Temperature Annealing
The thermal stability and carrier recombination kinetics of an as-received InGaN/GaN multiple quantum well (MQW) structure, capped with a protective AlN thin film, are studied following a series of thermal annealings at temperatures between 500 deg C and 1100 deg C. Under 325 nm focused laser excita
Conceptio Open Archive
Analyze & explore related research in Conceptio
Connect this record directly into your research workflow or AI agent. Explore citations across open repositories, query full text, and export structured proof bundles.
This document is indexed with metadata only: full text is not available in the archive for this record. Open the official source ↗
Related documents
- 4-Wave-Mixing Signals from Extended Exciton-States above the Mobility Edge in Gaas (Ga,Al)as Multiple-Quantum Wells#448951
- Monolithic Axial InGaAs Quantum Dot Emitters in GaAs-Based Nanowires via Sb-Mediated Facet Engineering#922219
- Non-polar GaN epilayers and heterostructures for photonic applications#1100267
- Quantum optical two-atom thermal diode#955774
- Gain and Threshold Improvements of 1300 nm Lasers based on InGaAs/InAlGaAs Superlattice Active Regions#179075
Record · ID 997309
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Bring this data into your agent: Connect via MCP or API · 20 free credits to start · no card required
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive