arXiv (All)
open access
Spin properties in droplet epitaxy-grown telecom quantum dots
We investigate the spin properties of InAs/InGaAs/InP quantum dots grown by metalorganic vapor-phase epitaxy (MOVPE) deposition using droplet epitaxy, which emit in the telecom C-band. Using pump-probe Faraday ellipticity measurements, we determine electron and hole $g$-factors of $|g_e| = 0.934$ an
Conceptio Open Archive
Analyze & explore related research in Conceptio
Connect this record directly into your research workflow or AI agent. Explore citations across open repositories, query full text, and export structured proof bundles.
This document is indexed with metadata only: full text is not available in the archive for this record. Open the official source ↗
Related documents
- Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing#374026
- Few-electron spin qubits in optically active GaAs quantum dots#609783
- Quantum Theory of Third-harmonic Generation in Epsilon-Near-Zero Materials#793844
- Complete coherent control of spin qubits in self-assembled InAs quantum dots under oblique magnetic fields#1048626
- Measuring and correcting nanosecond pulse distortions in quantum-dot spin qubits#1070769
Record · ID 997978
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Bring this data into your agent: Connect via MCP or API · 20 free credits to start · no card required
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive