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12 nm FinFETs from 292 K to 10 mK: Characterization and a Temperature-Continuous Compact Model for Qubit Control
We report cryogenic characterization and compact modeling of GlobalFoundries (GF) 12LP regular-voltage-threshold (RVT) n- and p-FinFETs, measured from 292 K to 10 mK. Both devices retain sub-Kelvin gate control without carrier freeze-out, with the n-type device exhibiting an intrinsic sub-threshold
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