arXiv (All)
open access
Epitaxial inversion of spontaneous polarization in ε-Ga2O3
Polar wide bandgap semiconductors offer the unique capability to manipulate internal electric fields and induce two-dimensional electron gases (2DEG). The emerging orthorhombic ε-Ga2O3 is a promising candidate owing to its large spontaneous polarization (Psp). However, exploiting this material is hi
Conceptio Open Archive
Analyze & explore related research in Conceptio
Connect this record directly into your research workflow or AI agent. Explore citations across open repositories, query full text, and export structured proof bundles.
This document is indexed with metadata only: full text is not available in the archive for this record. Open the official source ↗
Related documents
- Bandgap‐Engineered AlGaAs/GaAs Heterostructures for Wavelength‐Selective Dual‐Polarity Photoelectrochemistry#326054
- Mechanisms and challenges of graphene-assisted epitaxy of GaAs : towards 2D material-based layer transfer for III-V photovoltaic applications#254240
- Enhanced thermal conductivity of (010) (AlxGa1-x)2O3 epitaxial films utilizing indium-catalyzed molecular beam epitaxy#1050267
- Strain-Field-Induced Bandgap Opening in Bilayer Graphene.#275705
- Metallic-Phase-Fe$_3$GaTe$_2$ Enabled Interface Engineering for Self-Powered and High-Gain WS$_2$ Photodetectors#975346
Record · ID 1013001
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Bring this data into your agent: Connect via MCP or API · 20 free credits to start · no card required
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive