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Enhanced thermal conductivity of (010) (AlxGa1-x)2O3 epitaxial films utilizing indium-catalyzed molecular beam epitaxy
(AlxGa1-x)2O3/beta-Ga2O3 transistors are an emerging candidate for high-power and high-frequency electronic devices. beta-Ga2O3 in particular is notably limited for anisotropic low thermal conductivity, which is further reduced in (AlxGa1-x)2O3 due to alloy and other defect-driven phonon scattering
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