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High-Mobility Ge-Doped $β$-Ga$_2$O$_3$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition
In this work, high-quality Ge-doped (-201) $β$-Ga$_2$O$_3$ thin films were heteroepitaxially grown on c-plane sapphire substrates with offcut angles of 0 deg, 2 deg, 6 deg, and 8 deg using low-pressure chemical vapor deposition (LPCVD). Increasing sapphire offcut promoted step-flow growth, resulting
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