arXiv (All)
open access
HVPE Growth of Si-Doped $β$-Ga$_2$O$_3$ on Sapphire: Influence of Substrate Offcut on Structural and Electrical Properties
Si-doped $β$-Ga$_2$O$_3$ films were heteroepitaxially grown on sapphire substrates using HVPE. The influence of sapphire offcut on growth kinetics, surface morphology, crystalline quality, and electrical transport properties was systematically investigated. Growth kinetics studies revealed a strong
Conceptio Open Archive
Analyze & explore related research in Conceptio
Connect this record directly into your research workflow or AI agent. Explore citations across open repositories, query full text, and export structured proof bundles.
This document is indexed with metadata only: full text is not available in the archive for this record. Open the official source ↗
Related documents
- High-Mobility Ge-Doped $β$-Ga$_2$O$_3$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition#1013616
- Water-based, large-scale transfer of 2D materials grown on sapphire substrates / Nico Rademacher, Lukas Völkel, Eros Reato, Martin Otto, Simonas Krotkus, Jan Mischke, Emre Yengel, Christof Mauder, Alex Henning, Michael Heuken, Ke Ran, Joachim Mayer, Max C. Lemme#675408
- Fast-Neutron Irradiation Effect in Heteroepitaxial $β$-Ga$_2$O$_3$ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates#1013587
- Bubble behavior in titanium doped sapphire crystals: from micro to macro scale#20753
- Impact of Sapphire Substrate Reconstruction on the Structural, Electronic, and Photonic Properties of MoS(2).#165820
Record · ID 1141562
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Bring this data into your agent: Connect via MCP or API · 20 free credits to start · no card required
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive