arXiv (All)
open access
Si- and C-Induced Modifications in Vapor-Solid-Grown InGaAs Nanowires: From Crystal Structure to Carrier Dynamics
Determining the impact of dopants in ternary III-V nanowires (NWs) is crucial for their applications in next-generation optoelectronic and photonic devices; however, the interplay between dopant species, crystal structure, and carrier dynamics in vapor-solid-grown InGaAs NWs remains underexplored. I
Conceptio Open Archive
Analyze & explore related research in Conceptio
Connect this record directly into your research workflow or AI agent. Explore citations across open repositories, query full text, and export structured proof bundles.
This document is indexed with metadata only: full text is not available in the archive for this record. Open the official source ↗
Related documents
- Early-stage of III-V nanowire epitaxy on silicon studied by in situ TEM#1158105
- Self Assembled Nano Coatings by Chemical Vapor Deposition#639915
- Single-Photon Nonlinearity from a Nanobeam with a Quantum Dot#1131859
- Thermal Stability and Carrier Recombination Kinetics in InGaN/GaN Multiple Quantum Wells under High-Temperature Annealing#997309
- PbS Quantum Dot based Optoelectronic Devices / Huaying Zhong ; Gutachter: Peter Müller-Buschbaum, Hristo Iglev ; Betreuer: Peter Müller-Buschbaum#970326
Record · ID 1013929
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Retrieved via Conceptio: every document is proof-bundled with source, license, and retrieval metadata.
Bring this data into your agent: Connect via MCP or API · 20 free credits to start · no card required
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive
Read the Docs → · View CLI source on GitHub · Conceptio Open Knowledge Archive