İzmir Yüksek Teknoloji Enstitüsü
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Xps Study of Pulsed Nd:yag Laser Oxidized Si
X-ray photoelectron spectra (XPS) of thin SiO2 layers grown by pulsed Nd:YAG laser at a substrate temperature of 748 K are presented. The peak decomposition technique combined with depth profiling is employed to identify the composition and chemical states of the film structure. It is established th
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