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Dose-Insensitive Defect Engineering, Carrier Kinetics, and Reproducible Chromaticity Tuning in Ion-Implanted InGaN/GaN Quantum Wells
Post-growth defect engineering via ion implantation provides a powerful pathway for spatial optical profiling and colour patterning in III-V alloying photonic integration. However, the comprehensive recombination kinetics governing deep-level defect saturation and excitonic recovery under high-tempe
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