HAL (France)
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Real-Time Control of Lattice Matching of InGaAs on InP via Curvature-Based <i>Operando</i> MBE Monitoring
Real-time control of lattice matching during epitaxial growth is a longstanding challenge in the fabrication of highperformance III-V semiconductor heterostructures. Strain relaxation and lattice mismatch critically affect device efficiency, particularly in epitaxial InGaAs/InP heterostructures wide
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