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Electron and Hole Surface Roughness Scattering-Limited Mobilities in Oxygen-Inserted (Oi) Si Channel
The electron and hole surface roughness scattering (SRS)-limited mobilities, deconvolved from 4.2 K measurements, were compared between oxygen-inserted (OI) and control Si channel for n- and pMOSFETs. It was found that electron SRS-limited mobility in the OI-Si channel is 55% higher, whereas hole SR
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