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Optical and electrical properties of SiC/p-Si heterojunction

Taşyürek, Lütfi Bilal et al.
Recep Tayyip Erdoğan University Institutional Repository · Papers
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scanning-electron-microscopy
In this study, SiC was used to manufacture Al/SiC/p-Si/Al heterojunction structure by thermal evaporation method. X-ray diffractometry (XRD) and field emission scanning electron microscope (FE-SEM) analyses were evaluated for the characterization of semiconductor SiC layers. For the electrical chara
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