HAL (France)
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Al‐Acceptor Incomplete Ionization Effects on Static and Reverse Recovery Characteristics of 4H‐SiC PiN Power Diodes
This work investigates the incomplete ionization effects of aluminum (Al) acceptor dopants on the static and dynamic performance of 4H‐SiC PiN power diodes, using calibrated TCAD simulations. The N dopants form shallow donor energy at E C − 0.065 eV and are nearly completely ionized at room temperat
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