HAL (France)
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Phonons in Single‐Domain κ‐Ga 2 O 3 Studied by Polarization Angle‐Resolved Raman Scattering
ABSTRACT Gallium oxide (Ga 2 O 3 ) is an ultra‐wide bandgap semiconductor with several polymorphs, among which the orthorhombic κ‐phase is particularly attractive for high‐power electronics, non‐volatile memory, and charge‐tunable devices due to its large spontaneous polarization and potential ferro
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